SM25JZ51 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE

SM25GZ51,SM25JZ51
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Commutation
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j−c)}
dv / dt
(dv / dt) c
V_DRM = Rated
V_D = 12V
R_L = 20Ω
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
V_D = 12V
R_L = 20Ω
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
I_TM = 40A
V_D = Rated, Tc = 125°C
V_D = 12V, I_TM = 1A
Junction to Case, AC
V_DRM = Rated, T_j = 125°C
Exponential Rise
V_DRM = 400V, T_j = 125°C
(di / dt) c = − 15A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
30
―
―
30
mA
―
―
30
―
―
1.5
V
0.2
―
―
V
―
―
60
mA
―
―
1.3 °C / W
―
300
― V / µs
10
―
― V / µs
MARKING
NUMBER
*1
TYPE
SYMBOL
SM25GZ51
SM25JZ51
MARK
M25GZ51
M25JZ51
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-13