SM25JZ51 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE

SM25GZ51,SM25JZ51
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
SM25GZ51,SM25JZ51
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 25A
l High Commutating (dv / dt)
: (dv / dt) c = 10V / µs
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage
SM25GZ51
SM25JZ51
R.M.S On−State Current
(Full Sine Waveform Tc = 73°C)
V_DRM
I_{T (RMS)}
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value
Critical Rate of Rise
of On−State Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
V_Isol
RATING
400
600
25
230 (50Hz)
253 (60Hz)
260
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
―
―
13−16A1A
Note 1: di / dt Test Condition
V_DRM = 0.5 × Rated
I_TM ≤ 40A
t_gw ≥ 10µs
t_gr ≤ 250ns
i_gp = I_GT × 2.0
1
2001-07-13