SM1G43 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM1G43,SM1J43
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
II
Gate Trigger Current
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Thermal Resistance
SYMBOL
TEST CONDITION
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j−c)}
R_{th (j−a)}
V_DRM = Rated
T2 (+) , Gate (+)
V_D = 12V,
R_L = 20Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
V_D = 12V,
R_L = 20Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
I_TM = 1.5A
V_D = Rated, Tc = 125°C
V_D = 12V, I_TM = 1A
Junction to Case, AC
Junction to Ambient, AC
MIN TYP. MAX UNIT
―
―
10
µA
―
―
2
―
―
2
V
―
―
2
―
2
―
―
―
5
―
―
―
―
5
mA
5
―
10
―
―
―
1.5
V
0.2
―
―
V
―
―
10
mA
―
―
40 °C / W
―
―
180 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SM1G43
SM1J43
MARK
M1G43
M1J43
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10