SM1G43 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM1G43,SM1J43
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM1G43,SM1J43
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 1A
l Higt Commutating (dv / dt)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM1G43
SM1J43
R.M.S On−State Current
(Full Sine Waveform Tc = 74°C)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
RATING
400
600
1.0
8 (50Hz)
8.8 (60Hz)
0.32
1
0.1
6
0.5
−40~125
−40~125
UNIT
V
A
A
A²s
W
W
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1E
1
2001-07-10