SM10LZ47 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM10LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Commutation
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
I_DRM
V_DRM = Rated
―
―
20
µA
V_GT
V_D = 12V,
R_L = 20Ω
T2 (+) , Gate (+) ―
―
1.5
T2 (+) , Gate (−) ―
―
1.5
V
T2 (−) , Gate (−) ―
―
1.5
I_GT
V_D = 12V,
R_L = 20Ω
T2 (+) , Gate (+) ―
―
30
T2 (+) , Gate (−) ―
―
30
mA
T2 (−) , Gate (−) ―
―
30
V_TM
I_TM = 15A
―
―
1.5
V
V_GD
V_D = Rated, Tc = 125°C
0.2
―
―
V
I_H
V_D = 12V, I_TM = 1A
―
―
50
mA
R_{th (j−c)}
dv / dt
Junction to Case, AC
V_DRM = 600V, T_j = 125°C
Exponential Rise
―
―
3.4 °C / W
―
300
― V / µs
(dv / dt) c
V_DRM = 400V, T_j = 125°C
(di / dt) c = − 5.5A / ms
10
―
― V / µs
MARKING
NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
*2
TYPE
SM10LZ47
MARK
M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10