SM10LZ47 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM10LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 800V
l R.M.S. On−State Current
: IT (RMS) = 10A
l High Commutation (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off−State Voltage
R.M.S On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
I_GM
T_j
T_stg
V_ISOL
800
10
100 (50Hz)
110 (60Hz)
50
50
5
0.5
10
2
−40~125
−40~125
1500
Note:
di / dt test condition
V_DRM = 0.5 × Rated, I_TM ≤ 15A, t_gw ≥ 10µs,
t_gr ≤ 250ns, i_gp = I_GT × 2.0
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
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13−10H1A
1
2001-07-10