SH8G41 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA HIGH-SPEED THYRISTOR SILICON PLANAR TYPE

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State and Reverse
Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Holding Current
Commutating Capacitor
Thermal Resistance
SYMBOL
TEST CONDITION
I_DRM
I_RRM
V_TM
V_GT
I_GT
V_GD
I_H
C_c
R_{th (j−a)}
V_DRM = V_RRM = 400V
I_TM = 25A
V_D = 6V, R_L = 10Ω
V_D = 200V, Ta = 125°C
R_L = 100Ω
C_M = 1000µF, V_CM = 350V, I_TM = 230A
L_M = 50µH, V_GR = −6V
Junction to Ambient
MARKING
NUMBER
*1
TYPE
SYMBOL
SH8G41
SH8G41
MIN MAX UNIT
―
250
µA
―
2.3
V
―
1.5
V
―
50
mA
0.2
―
V
―
150 mA
―
2.7
µF
―
90 °C / W
MARK
SH8G41
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10