SH8G41 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA HIGH-SPEED THYRISTOR SILICON PLANAR TYPE

TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
FOR AUTOMATIC−STROBE FLASHER APPLICATIONS
−−− DISCHARGER (Chopper)
SH8G41
Unit: mm
l Type No. SH8G41 is Designed for a Small Package Device Having
ShortedTurn−Off Time and Low Turn−On Loss at High Current.
l Repetitive Peak Off−State Voltage and Peak Reverse Voltage
: VDRM = VRRM = 400V
l Repetitive Peak Surge On−State Current : ITRM = 350A
l Critical Rate of Rise of On−State Current : di/dt = 100A/µs
l Plastic Mold Package
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak Off−State and
Reverse Voltage
Non−Repetitive Peak Reverse
Voltage
(Note 1)
Repetitive Peak Surge On−State
Current
(Note 2)
Critical Rate of Rise of On−State
Current
(Note 3)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_TRM
di /dt
P_GM
P_{G (AV)}
I_GM
T_j
T_stg
Note 1: Non − Rep. < 5ms, T_j = 0~125°C
Note 2: C_M = 1000µF
Note 3: i_G = 100mA
t_gw = 10µs
t_gr ≤ 250ns
RATING
400
450
350
100
5
0.5
2
−40~125
−40~125
UNIT
V
V
A
A / µs
W
W
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO−220AB
―
13−10G1B
1
2001-07-10