SH0R3D42 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – HIGH SPEED SWITCHING AND CONTROL APPLICATIONS

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Turn−On Time
Turn−Off Time
Critical Rate of Rise of Off−State Voltage
Holding Current
Thermal Resistance
SYMBOL
TEST CONDITION
I_DRM
V_TM
V_GT
I_GT
V_GD
t_gt
t_q
dv / dt
I_H
R_{th (j−c)}
T_j = 125°C, V_DRM = Rated
R_GK = 1kΩ
I_TM = 2A
V_D = 6V, R_L = 100Ω
V_D = Rated, Tc = 110°C
V_D = Rated, I_TM = 4A
I_G = 10mA
V_D = 20V, I_P = 1A, R_GK = 1kΩ
V_D = Rated, R_GK = 1kΩ
Tc = 110°C, Exponential Rise
R_L = 100Ω, R_GK = 1kΩ
Junction to Ambient
MARKING
NUMBER
*1
TYPE
SYMBOL
SH0R3D42
SH0R3D42
MIN MAX UNIT
―
100
µA
―
1.8
V
―
0.9
V
―
1.0 mA
0.3
―
V
―
2.0
µs
―
6.0
µs
15
― V / µs
―
15
mA
―
250 °C / W
MARK
H0R3D
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10