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SH0R3D42 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH SPEED SWITCHING AND CONTROL APPLICATIONS | |||
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SH0R3D42
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
SH0R3D42
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
Unit: mm
l Repetitive Peak OffâState Voltage : VDRM = 200V
l Average OnâState Current
: IT (AV) = 300mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak OffâState Voltage
(RGK = 1kâ¦)
NonâRepetitive Peak OffâState
Voltage (RGK = 1kâ¦)
Average OnâState Current
(Half Sine Waveform Ta = 30°C)
R.M.S OnâState Current
Peak One Cycle Surge OnâState
Current (NonâRepetitive)
I2t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
VDRM
VDSM
IT (AV)
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
200
250
300
450
7 (50Hz)
0.3
0.1
0.01
3.5
â7
125
â40~125
â40~125
Note: Should be used with gate resistance as follows.
UNIT
V
V
mA
mA
A
A2s
W
W
V
V
mA
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TOâ92
SCâ43
13â5A1A
1
2001-07-10
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