S6903G Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

S6903G,S6903J
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Repetitive Peak Off−State Current
I
II
Gate Trigger Voltage
III
IV
I
II
Gate Trigger Current
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
at Commutation
I_DRM
V_GT
I_GT
V_TM
V_GD
I_H
R_{th (j−c)}
(dv / dt) _c
V_DRM = Rated
T2 (+), Gate (+)
V_D = 12V
R_L = 20Ω
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
V_D = 12V
R_L = 20Ω
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
I_TM = 30A
V_D = Rated, Tc = 125°C
V_D = 12V, I_TM = 2A
Junction to Case, AC
V_DRM = 400V, T_j = 125°C
(di / dt) c = −8.7A / ms
Note 1: Repetitive Surge On−State Current
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
mA
―
―
30
―
―
―
―
―
1.6
V
0.2
―
―
V
―
―
50
mA
―
―
1.0 °C / W
10
―
― V /µs
I_P = 120A (f = 50Hz) at Tc = 45°C
Max. Repetitive Number of cycle n = 100k cycle (Repetitive cycle T = 3s Min.)
2
2001-07-10