S6903G Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

S6903G,S6903J
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
S6903G,S6903J
AC POWER CONTROL APPLICATIONS
l High Rush Current Capability
Optimal for controlling actuators where high rush current may flow.
: ITRM = 120A (n = 100k cycle, Tc = 45°C)
l R.M.S On−State Current
: IT (RMS) = 20A
l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
S6903G
S6903J
R.M.S On−State Current
(Full Sine Waveform Tc = 100°C)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
Repetitive Surge On−State Current
(Note 1)
I²t Limit Value
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I_TRM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
RATING
400
600
20
180 (50Hz)
200 (60Hz)
120
167
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A
A²s
A / µs
W
W
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.0 g
TO−220AB
―
13−10G1A
MARKING
NUMBER
*1
SYMBOL
TYPE
S6903G
S6903J
MARK
S6903G
S6903J
Example
*2
8A: January 1998
8B: February 1998
8L: December 1998
1
2001-07-10