S6744 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON PLANAR TYPE

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Critical Rate of Rise of Off−State Voltage
Holding Current
Latching Current
Thermal Resistance
SYMBOL
TEST CONDITION
I_DRM
I_RRM
V_TM
V_GT
I_GT
V_GD
dv / dt
I_H
I_L
R_{th (j−a)}
V_DRM = V_RRM = Rated
I_TM = 25A
V_D = 6V, R_L = 10Ω
V_D = Rated × 2 / 3, Tc = 125°C
V_DRM = Rated,Tc = 125°C,
Exponential Rise
V_D = 6V, I_TM = 1A
V_D = 6V, f = 50Hz,
t_gw = 100µs, i_G = 40mA
Junction to Ambient
S6744
MIN TYP. MAX UNIT
―
―
10
µA
―
―
1.5
V
―
―
1.0
V
―
―
20
mA
0.2
―
―
V
―
50
― V / µs
―
―
40
mA
―
―
60
mA
―
―
70 °C / W
MARKING
*1
TYPE
NAME
S6744
MARK
S6744
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10