S6744 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON PLANAR TYPE

TOSHIBA THYRISTOR SILICON PLANAR TYPE
S6744
S6744
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400V
Repetitive Peak Reverse Voltage : VRRM = 400V
l Average On−State Current
: IT (AV) = 8A
l A Large Current Pulse Capability
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off−State Voltage
and Repetitive Peak Reverse Voltage
Non−Repetitive Peak Reverse
Voltage (Non−Repetitive<5ms,
T_j = 0~125°C)
Average On−State Current
(Half Sine Waveform Tc = 72°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Repetitive Peak Surge On−State
Current
(Note 1)
Critical Rate of Rise of On−State
Current
(Note 2)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
I_TRM
di / dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
400
V
500
V
8
12.6
200 (50Hz)
220 (60Hz)
200
1300
100
5
0.5
10
−5
2
−40~125
−40~125
A
A
A
A²s
A
A / µs
W
W
V
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g
Note 1: C_M ≤ 500µF, t_w ≤ 300µs, V_D ≤ 350V
Note 2: di / dt Test condition
V_DRM = 0.5 × Rated, I_TM ≤ 25A, t_gw ≥ 10µs, t_gr ≤ 250ns, i_gp = I_GT × 2.0
Unit: mm
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13−10J1B
1
2001-07-10