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S-AV34 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – RF POWER AMPLIFIER MODULE ○RF POWER AMPLIFIER MODULE for VHF BAND
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S-AV34
ELECTRICAL CHARACTERISTICS (Tc = 25℃, ZG = 50Ω)
CHARACTERISTIC
Frequency Range
Input Power
Output Power 1
Total Efficiency
Drain Current
Second Harmonic
Harmonic
Adjacent-Channel Power Ratio
Rate of Adjustment for Input Load
Gate Bias Current
Output Power 2
Ralative Phase Variation
Load Mismatch
SYMBOL
frange
Pi
Po1
ηT
IDD
2nd HRM
HRM
ACP
VSWRin
IGGBias
Po2
—
TEST CONDITION
MIN. TYP. MAX. UNIT
—
150
—
165 MHz
VDD = 10.8V, IDD = 2.8A (VGG = adjust)
Po = 39dBmW, ZL = 50Ω
—
—
6 dBmW
VDD = 10.8V, VGG = 5V, Pi = 12dBmW
ZL = 50Ω
43
—
— dBmW
VDD = 10.8V, Po = 39dBmW (Pi= adjust) 23
—
—
%
ZL = 50Ω
—
—
3
A
VDD = 10.8V, IDD = 2.8A (VGG = adjust) —
Po = 39dBmW (Pi= adjust), ZL = 50Ω
—
—
-30
dB
—
-30
dB
VDD = 10.8V, IDD = 2.8A (VGG = adjust)
Po = 39dBmW (Pi= adjust), ZL = 50Ω
Modulated Wave :ππ/4·DQPSK
(α=0.5, 32kbps)
—
Band Width : 16kHz
Frequency Offset : 25kHz
—
-34
dB
Input VSWR ( When RF output pin
connects 50Ω Load )
—
—
3
—
VDD = 10.8V, IDD = 2.8A (VGG = adjust)
Po = 39dBmW (Pi= adjust), ZL = 50Ω
—
—
After that Pi OFF
5
mA
VDD = 8.7V, VGG = 5V, Pi = 5dBmW
ZL = 50Ω
36
—
— dBmW
VDD= 10.8V, IDD = 2.8A (VGG = adjust)
Po = 39dBmW (Pi= adjust), ZL = 50Ω
0° (@Po = 28dBmW)
—
—
20
°
Po = 28 to 41.5dBmW
VDD = 10.8V, IDD = 2.8A (VGG = adjust)
—
Po = 39dBmW (Pi= adjust, ZL = 50Ω)
No Degradation
—
VSWR LOAD 20: 1 ALL PHASE
Stability
VDD = 8.7 to 13.0V, VGG = 0 to 5V
—
Pi = -40 to 39 dBmW
VSWR LOAD 2.5: 1 ALL PHASE
All spurious output
than 60dB below
—
desired signal
Caution
ï½¥ This product has intersetting cap. Please pay attention for exceeding stress and foreign matter in your application.
And not to take away the cap.
ï½¥ Do not break, cut, crush or dissolve chemically. Dispose of this product properly according to law.
Do not intermingle with normal industrial or domestic waste.
ï½¥ This product is electrostatic sensitivity, please handle with caution.
2
2007-11-01
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