S-AV34 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – RF POWER AMPLIFIER MODULE ○RF POWER AMPLIFIER MODULE for VHF BAND

TOSHIBA RF POWER AMPLIFIER MODULE
S-AV34
S-AV34
○RF POWER AMPLIFIER MODULE for VHF BAND
·for digital use
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃, Z_G = Z_L = 50Ω)
CHARACTERISTIC
SYMBOL
TEST CONDITION
RATING UNIT
DC Supply Voltage
V_DD V_GG =0V, Pi =0mW
20
V
DC Supply Voltage
V_GG V_DD≦10.8V, Pi =0mW
8
V
Input Power
P_i
V_DD≦10.8V
20
dBmW
Junction Temperature
T_{j MAX}
150
℃
Storage Temperature Range
T_stg
-40~110
℃
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Caution: This absolute maximum rating given in a sheet guarantees each item independently. When two items
or more of maximum rated items joins a device at once. It becomes the outside of a guarantee.
Please design in circuit to make it always operate within this regulation also on the worst condition.
PACKAGE OUTLINE
Unit in mm
⑤
① ②③④
① RF Input ② V_GG ③ V_DD
④ RF Output ⑤ GROUND(FRANGE)
JEDEC
JEITA
TOSHIBA
Weight: 11.8g
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—
5-32F
1
2007-11-01