S-AU81 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – RF Power Amplifier Module

S-AU81
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Power gain (1)
Control current
Total current (1)
Adjacent-channel power
ratio (1)
Power gain (2)
Total current (2)
Adjacent-channel power
ratio (2)
Power gain (3)
Adjacent-channel power
ratio (3)
VSWRin
2fo
Harmonics
3fo
Stability
Receiving band noise
Load mismatch
G_p (1)
I_con
I_t (1)
V_CC1, V_{CC 2} = 3.6 V, V_con = 2.85 V (Note 2),
P_o = 27dBmW
f = 887~925 MHz, P_in = adjust, Z_G = Z_L = 50 W
ACPR1 (1)
ACPR2 (2)
V_CC1, V_{CC 2} = 3.6 V,
V_con = 2.85 V (Note 2),
P_o = 27dBmW, f = 887~925 MHz,
Z_G = Z_L = 50 W (Note 3)
900 kHz
1.98 MHz
G_p (2)
I_t (2)
V_CC1, V_{CC 2} = 1.5 V, V_con = 2.85 V (Note 2),
P_o = 14dBmW, f = 887~925 MHz, P_in = adjust,
Z_G = Z_L = 50 W
ACPR1 (2)
ACPR2 (2)
V_CC1, V_{CC 2} = 1.5 V,
V_con = 2.85 V (Note 2),
P_o = 14dBmW, f = 887~925 MHz,
Z_G = Z_L = 50 W (Note 3)
900 kHz
1.98 MHz
G_p (3)
V_CC1, V_{CC 2} = 3.6 V, V_con = 2.85 V (Note 2),
P_o = 27dBmW, f = 887~925 MHz, P_in = adjust,
Z_G = Z_L = 50 W), Tc = -20~+60°C
ACPR1 (3)
ACPR2 (3)
V_CC1, V_{CC 2} = 3.6 V,
V_con = 2.85 V (Note 2),
P_o = 27dBmW, f = 887~925 MHz,
Z_G = Z_L = 50 W,
Tc = -20~+60°C (Note 3)
900 kHz
1.98 MHz
VSWRin
HRM (1)
HRM (2)
V_CC1, V_{CC 2} = 3.6 V, V_con = 2.85 V (Note 3),
P_o = 27dBmW, f = 887~925 MHz, P_in = adjust,
Z_G = Z_L = 50 W
SPR
NRB
¾
V_CC1, V_{CC 2} = 1.5 V, 2.5 V, 3.6 V, 4.2 V,
V_con = 2.85 V (Note 3), P_o ^<= 27dBmW,
f = 887~925 MHz, P_in = adjust,
Z_G = 50 W, VSWR LOAD = 3:1 all phase
V_CC1, V_{CC 2} = 3.6 V, V_con = 2.85 V (Note 2),
P_o ^<= 27dBmW, f = 887~925 MHz, P_in = adjust,
Z_G = Z_L = 50 W
V_CC1, V_{CC 2} = 1.5 V~4.2 V,
V_con = 2.85 V (Note 2), P_o ^<= 27dBmW,
f = 887~925 MHz, P_in = adjust,
Z_G = 50 W, VSWR LOAD = 3:1 all phase
25.0 28.0 ¾
¾
3
5
¾
385
¾
¾
-50 -45
¾
-60 -56
21.0 24.0 ¾
¾
97
¾
¾
-50
-45
¾
-60
-56
24.0 27.0 ¾
¾ -48 -43
¾
-58
-55
¾
2
3
¾
¾ -30
¾
¾ -45
¾
¾
-60
¾ -135 ¾
No degradation
dB
mA
mA
dB
dB
dB
mA
dB
dB
dB
dB
dB
¾
dB
dB
dB
dBmW/
Hz
¾
Caution: This RF power amplifier is the electrostatic sensitive device. Please handle with caution.
Note 2: V_con = 2.85 V is set to obtain Iidle ^~- 75 mA when V_CC1, V_CC2 = 3.6 V
Note 3:
ACPR
a) Pc (1.23 MHz) is average power measured for 1.23 MHz bandwidth with CDMA signal.
b) P (30 kHz) is average power measured for 30 kHz bandwidth with 900 kHz/1.98 MHz offset.
c) ACPR1 (or ACPR2) = P (30 kHz) - P_c (1.23 MHz) dB
Note 4: These electrical characteristics are measured using Toshiba recommended test board.
2
2001-11-06