S-AU81 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – RF Power Amplifier Module

RF Power Amplifier Module
S-AU81
Power Amplifier Modules for Domestic
cdmaOne
· GaAs HBT Micro PA (on-chip bias circuit and
matching circuit)
· Output power: Po = 27.0dBmW (min)
· Gain: Gp = 28.0dB (typ.)
· Total current: It (1) = 385 mA (typ.)
(@Pout = 27.0dBmW)
· Low-voltage operation: Operation at VCC = 1.5 V is
possible
It (2) = 97 mA (typ) (@Pout = 14dBmW, VCC = 1.5 V)
· This device features an output control pin which
can be switched between low-power and high-power
settings.
It = 90 mA (typ.) (@Pout = 14dBmW, VCC = 2.70 V)
Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.0 g (typ.)
Characteristics
Supply voltage 1
Supply voltage 2
Control voltage
Collector current
Power dissipation
Operating temperature
Storage temperature range
Note 1: Ta = 25°C
Symbol
Rating
Unit
V_CC1
5
V
V_CC2
5
V
V_con
4
V
I_CC
1
A
P_D (Note 1)
2
W
T_op
-20~+60
°C
T_stg
-30~+125
°C
Marking
Pin No.1
Abbreviated product no.
U81
S-AU81
Unit: mm
―
―
5-6A
Monthly lot number
1
2001-11-06