RN2912FS Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2912FS,RN2913FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2912FS
RN2913FS
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
C_ob
V_CB = −20 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 mA
I_C = −5 mA, I_B = −0.25 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
R1
⎯
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
300 ⎯
⎯
⎯
−0.15 V
⎯
1.2
⎯
pF
17.6 22 26.4
kΩ
37.6 47 56.4
2
2007-11-01