RN2912FS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2912FS,RN2913FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2912FS, RN2913FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1912FS and RN1913FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
C
R1
B
1.EMIITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2
(E2)
5.BASE2
(B2)
fS6 6.COLLECTOR1 (C1)
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
−20
V
V_CEO
−20
V
V_EBO
−5
V
I_C
−50
mA
P_C (Note 1)
50
mW
T_j
150
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
654
Q1
Q2
123
1
2007-11-01