RN2414 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
RN2414~2418
Collector cut-off current
RN2414~2418
RN2414
RN2415
Emitter cut-off current
RN2416
RN2417
RN2418
DC current gain
RN2414~16, 18
RN2417
Collector-emitter
saturation voltage
RN2414~2418
RN2414
RN2415
Input voltage (ON)
RN2416
RN2417
RN2418
RN2414
RN2415
Input voltage (OFF)
RN2416
RN2417
RN2418
Translation frequency RN2414~2418
Collector output
capacitance
Input resistor
Resistor ratio
RN2414~2418
RN2414
RN2415
RN2416
RN2417
RN2418
RN2414
RN2415
RN2416
RN2417
RN2418
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R₁
R₁/R₂
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_CE = −50V, I_B = 0
― V_EB = −5V, I_C = 0
― V_EB = −6V, I_C = 0
― V_EB = −7V, I_C = 0
― V_EB = −15V, I_C = 0
― V_EB = −25V, I_C = 0
― _{VCE = −5V,}
― ^{IC = −10mA}
―
I_C = −5mA,
I_B = −0.25mA
―
―
―
V_CE = −0.2V,
I_C = −5mA
―
―
―
―
―
V_CE = −5V,
I_C = −0.1mA
―
―
―
V_CE =−10V,
I_C = −5mA
―
V_CB = −10V, I_E = 0,
f = 1MHz
―
―
―
―
―
―
―
―
―
―
―
―
RN2414~RN2418
Min Typ. Max Unit
―
― −100 nA
―
― −500 nA
−0.35 ― −0.65
−0.37 ― −0.71
−0.36 ― −0.68 mA
−0.78 ― −1.46
−0.33 ― −0.63
50
―
―
―
30
―
―
― −0.1 −0.3
V
−0.5 ― −2.0
−0.6 ― −2.5
−0.7 ― −2.5
V
−1.5 ― −3.5
−2.5 ― −10.0
−0.3 ― −0.9
−0.3 ― −1.0
−0.3 ― −1.1
V
−0.3 ― −3.0
−0.5 ― −5.7
―
200
―
MHz
―
3.0
6.0
pF
0.7
1.0
1.3
1.54 2.2 2.86
3.29 4.7 6.11 kΩ
7.0 10.0 13.0
32.9 47.0 61.1
―
0.1
―
― 0.22 ―
― 0.47 ―
―
― 2.13 ―
―
4.7
―
2
2001-06-07