RN2414 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2414~RN2418
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2414,RN2415,RN2416,RN2417,RN2418
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1414~RN1418
Equivalent Circuit and Bias Resistor Values
Type No.
RN2414
RN2415
RN2416
RN2417
RN2418
R₁ (kΩ)
1
2.2
4.7
10
47
R₂ (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2414~2418
RN2414
RN2415
RN2416
RN2417
RN2418
RN2414~2418
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
−50
−50
−5
−6
−7
−15
−25
−100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Unit
V
V
V
mA
mW
°C
°C
1
2001-06-07