RN2210 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2210,RN2211
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN2210
RN2211
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE = −5V, I_C = −1mA
― I_C = −5mA, I_B = −0.25mA
― V_CE = −10V, I_C = −5mA
― V_CB = −10V, I_E = 0, f = 1MHz
R1
―
―
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
120
―
400
―
―
−0.1 −0.3
V
―
200
― MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
2
2001-06-07