RN2210 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2210,RN2211
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1210, 1211
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
JEDEC
EIAJ
TOSHIBA
Unit
Weight: 0.13g
−50
V
−50
V
−5
V
−100
mA
300
mW
150
°C
−55~150
°C
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2-4E1A
1
2001-06-07