RN2101F Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2104
RN2105, 2106
RN2101~2106
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2104
RN2105
RN2106
Symbol
I_CBO
I_CEO
Test
Circuit
Test Condition
V_CB = −50 V, I_E = 0
―
V_CE = −50 V, I_B = 0
I_EBO
V_EB = −10 V, I_C = 0
―
V_EB = −5 V, I_C = 0
h_FE
―
V_CE = −5 V,
I_C = −10 mA
V_{CE (sat)}
―
I_C = −5 mA,
I_B = −0.25 mA
V_{I (ON)}
―
V_CE = −0.2 V,
I_C = −5 mA
V_{I (OFF)}
f_T
C_ob
―
V_CE = −5 V,
I_C = −0.1 mA
―
V_CE = −10 V,
I_C = −5 mA
―
V_CB = −10 V, I_E = 0,
f = 1 MHz
R1
―
R1/R2
―
RN2101∼RN2106
Min Typ. Max Unit
―
― −100
nA
―
― −500
−0.82 ― −1.52
−0.38 ― −0.71
−0.17 ―
−0.082 ―
−0.33
mA
−0.15
−0.078 ― −0.145
−0.074 ― −0.138
30
―
―
50
―
―
70
―
―
80
―
―
80
―
―
80
―
―
― −0.1 −0.3 V
−1.1 ― −2.0
−1.2 ― −2.4
−1.3 ― −3.0
V
−1.5 ― −5.0
−0.6 ― −1.1
−0.7 ― −1.3
−1.0 ― −1.5
V
−0.5 ― −0.8
―
200
― MHz
―
3
6
pF
3.29 4.7 6.11
7
10
13
15.4 22 28.6
kΩ
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
2
2007-11-01