RN2101F Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2101∼RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101, RN2102, RN2103,
RN2104, RN2105, RN2106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z Built-in bias resistors
z Simplified circuit design
z Fewer parts and simplified manufacturing process
z Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resistor Values
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101~2106
RN2101~2104
RN2105, 2106
RN2101~2106
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
−50
V
−50
V
−10
V
−5
−100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01