RN2101CT Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2101CT ~ RN2106CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2101CT to 2106CT
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN2106CT
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN2106CT
RN2101CT to 2106CT
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN2106CT
RN2101CT to 2104CT
RN2105CT, 2106CT
RN2101CT to 2106CT
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN2106CT
RN2101CT to 2104CT
RN2105CT
RN2106CT
Symbol
I_CBO
I_CEO
Test Condition
V_CB = −20 V, I_E = 0
V_CE = −20 V, I_B = 0
I_EBO
V_EB = −10 V, I_C = 0
V_EB = −5 V, I_C = 0
h_FE
V_CE = −5 V,
I_C = −10 mA
V_{CE (sat)}
I_C = −5 mA,
I_B = −0.25 mA
V_{I (ON)}
V_CE = −0.2 V,
I_C = −5 mA
V_{I (OFF)}
C_ob
V_CE = −5 V,
I_C = −0.1 mA
V_CB = −10 V, I_E = 0,
f = 1 MHz
R1
⎯
R1/R2
⎯
Min Typ. Max Unit
⎯
⎯ −100
nA
⎯
⎯ −500
−0.89 ⎯ −1.33
−0.41 ⎯ −0.63
−0.18 ⎯ −0.29
mA
−0.088 ⎯ −0.133
−0.085 ⎯ −0.127
−0.08 ⎯ −0.121
30
⎯
⎯
60
⎯
⎯
100 ⎯
⎯
120 ⎯
⎯
120 ⎯
⎯
120 ⎯
⎯
⎯
⎯ −0.15 V
−1.0 ⎯ −2.0
−1.0 ⎯ −2.2
−1.1 ⎯ −2.7
V
−1.2 ⎯ −3.6
−0.6 ⎯ −1.1
−0.6 ⎯ −1.2
−0.8 ⎯ −1.5
V
−0.4 ⎯ −0.8
⎯
1.2
⎯
pF
3.76 4.7 5.64
8
10
12
17.6 22 26.4
kΩ
37.6 47 56.4
1.76 2.2 2.64
3.76 4.7 5.64
0.8 1.0 1.2
0.0376 0.0468 0.0562
0.08 0.1 0.12
2
2009-04-17