RN2101CT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2101CT ~ RN2106CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2101CT,RN2102CT,RN2103CT
RN2104CT,RN2105CT,RN2106CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1101CT to RN1106CT
Equivalent Circuit and Bias Resistor Values
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN2101CT
RN2102CT
RN2103CT
RN2104CT
RN2105CT
RN2106CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
Absolute Maximum Ratings (Ta = 25°C)
R2 (kΩ)
4.7
10
22
47
47
47
CST3
1.BASE
2.EMITTER
3.COLLECOTR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101CT to 2106CT
RN2101CT to 2104CT
RN2105CT, 2106CT
RN2101CT to 2106CT
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
−20
V
−20
V
−10
V
−5
−50
mA
50
mW
150
°C
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17