RN2101ACT Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2101ACT ~ RN2106ACT
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current RN2101ACT to 2106ACT
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN2106ACT
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN2106ACT
RN2101ACT
RN2102ACT to 2106ACT
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN2106ACT
RN2101ACT to 2104ACT
RN2105ACT, 2106ACT
RN2101ACT to 2106ACT
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN2106ACT
RN2101ACT to 2104ACT
RN2105ACT
RN2106ACT
Symbol
I_CBO
I_CEO
Test Condition
V_CB = −50 V, I_E = 0
V_CE = −50 V, I_B = 0
I_EBO
V_EB = −10 V, I_C = 0
V_EB = −5 V, I_C = 0
h_FE
V_CE = −5 V,
I_C = −10 mA
V_{CE (sat)}
I_C = −5 mA,
I_B = −0.5 mA
I_C = −5 mA,
I_B = −0.25 mA
V_{I (ON)}
V_CE = −0.2 V,
I_C = −5 mA
V_{I (OFF)}
C_ob
V_CE = −5 V,
I_C = −0.1 mA
V_CB = −10 V, I_E = 0,
f = 1 MHz
R1
⎯
R1/R2
⎯
Min Typ. Max Unit
⎯
⎯ −100
nA
⎯
⎯ −500
−0.89 ⎯ −1.33
−0.41 ⎯ −0.63
−0.18 ⎯ −0.29
mA
−0.088 ⎯ −0.133
−0.085 ⎯ −0.127
−0.08 ⎯ −0.121
30
⎯
⎯
50
⎯
⎯
70
⎯
⎯
80
⎯
⎯
80
⎯
⎯
80
⎯
⎯
⎯
⎯ −0.15 V
−1.2 ⎯ −2.2
−1.2 ⎯ −2.6
−1.3 ⎯ −3.5
V
−1.5 ⎯ −5.0
−0.6 ⎯ −1.1
−0.7 ⎯ −1.3
−0.8 ⎯ −1.5
V
−0.5 ⎯ −0.8
⎯
0.9
⎯
pF
3.76 4.7 5.64
8
10
12
17.6 22 26.4
kΩ
37.6 47 56.4
1.76 2.2 2.64
3.76 4.7 5.64
0.8 1.0 1.2
0.0376 0.0468 0.0562
0.08 0.1 0.12
2
2009-04-17