RN2101ACT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2101ACT ~ RN2106ACT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2101ACT,RN2102ACT,RN2103ACT
RN2104ACT,RN2105ACT,RN2106ACT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Extra small package (CST3) is applicable for extra high density
fabrication.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN1101ACT to RN1106ACT
Equivalent Circuit and Bias Resistor Values
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN2101ACT
RN2102ACT
RN2103ACT
RN2104ACT
RN2105ACT
RN2106ACT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
CST3
JEDEC
1.BASE
2.EMITTER
3.COLLECOTR
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−50
V
RN2101ACT to 2106ACT
Collector-emitter voltage
V_CEO
−50
V
RN2101ACT to 2104ACT
−10
Emitter-base voltage
V_EBO
V
RN2105ACT, 2106ACT
−5
Collector current
I_C
Collector power dissipation
P_C
RN2101ACT to 2106ACT
Junction temperature
T_j
Storage temperature range
T_stg
−80
mA
100*
mW
150
°C
−55 to 150
°C
* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17