RN1961FS Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1961FS~RN1966FS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output
capacitance
Input resistor
Resistor ratio
RN1961FS~1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS~1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS~1964FS
RN1965FS, 1966FS
RN1961FS~1966FS
RN1961FS
RN1962FS
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS~1964FS
RN1965FS
RN1966FS
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
C_ob
R1
R1/R2
Test Condition
Min Typ. Max Unit
V_CB = 20 V, I_E = 0
V_CE = 20 V, I_B = 0
⎯
⎯
100
nA
⎯
⎯
500
0.89 ⎯ 1.33
V_EB = 10 V, I_C = 0
0.41 ⎯ 0.63
0.18 ⎯ 0.29
mA
0.088 ⎯ 0.133
V_EB = 5 V, I_C = 0
0.085 ⎯ 0.127
0.08 ⎯ 0.121
30
⎯
⎯
60
⎯
⎯
100 ⎯
⎯
V_CE = 5 V, I_C = 10 mA
120 ⎯
⎯
120 ⎯
⎯
120 ⎯
⎯
I_C = 5 mA,
I_B = 0.25 mA
⎯
⎯
0.15
V
1.0
⎯
2.0
1.0
⎯
2.2
1.1
⎯
2.7
V_CE = 0.2 V, I_C = 5 mA
V
1.2
⎯
3.6
0.6
⎯
1.1
0.6
⎯
1.2
0.8
⎯
1.5
V_CE = 5 V, I_C = 0.1 mA
V
0.4
⎯
0.8
V_CB = 10 V, I_E = 0,
f = 1 MHz
⎯
1.2
⎯
pF
3.76 4.7 5.64
8
10
12
17.6 22 26.4
⎯
kΩ
37.6 47 56.4
1.76 2.2 2.64
3.76 4.7 5.64
0.8 1.0 1.2
⎯
0.0376 0.0468 0.0562
0.08 0.1 0.12
2
2007-11-01