RN1441 Datasheet, PDF (2/9 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1441~RN1444
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
RN1441
I_CBO
I_EBO
h_{FE (Note)}
V_{CE (sat)}
f_T
C_ob
Input resistor
RN1442
R1
RN1443
RN1444
Note : h_FE classification
A: 200~700
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VEB = 25V, IC = 0
― VCE = 2V, IC = 4mA
― IC = 30mA, IB = 3mA
― ^VCE ^{= 6V, I}C ^{= 4mA}
― ^VCB ^{= 10V, I}E ^{= 0, f = 1MHz}
―
―
B: 350~1200
Min Typ. Max Unit
―
―
0.1
µA
―
―
0.1
µA
200
― 1200
―
―
0.1
V
―
30
― MHz
―
4.8
―
pF
3.9
5.6
7.3
7
10
13
kΩ
15.4 22 28.6
1.54 2.2 2.86
2
2001-06-07