RN1441 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1441~RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
l High emitter-base voltage: VEBO = 25V (min)
l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)
l Low on resistance: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Unit in mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Marking
Rating
Unit
50
V
20
V
25
V
300
mA
200
mW
150
°C
−55~150
°C
Type No.
RN1441
RN1442
RN1443
RN1444
H_FE classification
A
B
KA
KB
LA
LB
NA
NB
CA
CB
1
2001-06-07