RN1302TE85LF Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current RN1301 to 1306
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1301 to 1306
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1301 to 1304
RN1305, 1306
RN1301 to 1306
RN1301 to 1306
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
RN1301 to 1304
RN1305
RN1306
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R1
R1/R2
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_CE = 50V, I_B = 0
―
―
V_EB = 10V, I_C = 0
―
―
―
V_EB = 5V, I_C = 0
―
―
―
―
V_CE = 5V, I_C = 10mA
―
―
―
―
I_C = 5mA,
I_B = 0.25mA
―
―
―
V_CE = 0.2V, I_C = 5mA
―
―
―
―
V_CE = 5V, I_C = 0.1mA
―
― V_CE = 10V, I_C = 5mA
―
V_CB = 10V, I_E = 0,
f = 1MHz
―
―
―
―
―
―
―
―
―
―
―
RN1301~RN1306
Min Typ. Max Unit
―
―
100
nA
―
―
500
0.82 ― 1.52
0.38 ― 0.71
0.17 ―
0.082 ―
0.33
mA
0.15
0.078 ― 0.145
0.074 ― 0.138
30
―
―
50
―
―
70
―
―
―
80
―
―
80
―
―
80
―
―
―
0.1 0.3
V
1.1
―
2.0
1.2
―
2.4
1.3
―
3.0
V
1.5
―
5.0
0.6
―
1.1
0.7
―
1.3
1.0
―
1.5
V
0.5
―
0.8
― 250 ― MHz
―
3
6
pF
3.29 4.7 6.11
7
10
13
15.4 22 28.6
kΩ
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515 ―
0.09 0.1 0.11
2
2010-04-06