RN1302TE85LF Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1301~RN1306
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301,RN1302,RN1303
RN1304,RN1305,RN1306
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN1301
4.7
4.7
RN1302
10
10
RN1303
22
22
RN1304
47
47
RN1305
2.2
47
RN1306
4.7
47
Absolute Maximum Ratings (Ta = 25°C)
USM
JEDEC
JEITA
TOSHIBA
Weight: 6 mg (typ.)
―
SC-70
2-2E1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1301 to 1306
RN1301 to 1304
RN1305, 1306
RN1301 to 1306
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
10
V
5
100
mA
100
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06