RFM12U7X Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

RFM12U7X
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
Symbol
I_DSS
I_GSS
V_th
P_O
η_D
G_P
⎯
Test Condition
V_DS = 20 V, V_GS = 0 V
V_GS = 10 V
V_DS = 7.2 V, I_D = 0.5 mA
V_DS = 7.2 V,
I_idle = 750 mA (V_GS = adjust),
f = 520 MHz, P_i = 1 W,
Z_G = Z_L = 50 Ω
V_DS = 12.5 V,
P_O = 12 W (P_i = adjust),
I_idle = 750 mA (V_GS = adjust),
f = 520 MHz,
VSWR LOAD 20:1 all phase
Min Typ. Max Unit
⎯
⎯
10
μA
⎯
⎯
5
μA
0.5 1.0 1.5
V
11.5 12.0 ⎯
W
55
60
⎯
%
10.6 10.8 ⎯
dB
No degradation
⎯
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, V_DS = 7.2 V, I_idle = 750 mA, P_i = 1 W)
C7
P_i
Z_G = 50 Ω ^{C1 C2 C3}
L1
C9
C10
R1
L2
C11
C4
C5 C6
C12
C8
P_O
Z_L = 50 Ω
V_GS
V_DS
C1: 14 pF
C2: 11 pF
C3: 30 pF
C4: 30 pF
C5: 27 pF
C6: 8 pF
C7: 2200 pF
C8: 2200 pF
C9: 10000 pF
C10: 10 μF
C11: 10000 pF
C12: 10 μF
L1: φ0.6 mm enamel wire, 5.8ID, 4T
L2: φ0.6 mm enamel wire, 5.8ID, 8T
R1: 1.5 kΩ
2
2009-01-30