RFM12U7X Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
RFM12U7X
RFM12U7X
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Unit: mm
• Output power: P_O = 12 W (typ.)
• Gain: G_P = 10.8 dB (typ.)
• Drain efficiency: η_D = 60% (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Gate-source voltage
V_GSS
10
V
Drain current
Power dissipation
Channel temperature
Storage temperature range
I_D
4
A
P_D*
20
W
T_ch
150
°C
T_stg
−45 to 150
°C
JEDEC
JEITA
PW-X
―
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5N1A
temperature/current/voltage and the significant change in
Weight: 0.08 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
2
Type name
UG F
1
3
**
Dot
Lo No.
1. Gate
2. Source (heat sink)
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2009-01-30