RFM03U3CT Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
I_DSS
I_GSS
V_th
P_O
η_D
G_P
⎯
V_DS = 10 V, V_GS = 0 V
V_GS = 3 V
V_DS = 3.6 V, I_D = 0.1 mA
V_DS = 3.6 V,
I_idle = 500 mA (V_GS = adjust),
f = 520 MHz, P_i = 0.1 W,
Z_G = Z_L = 50 Ω
V_DS = 3.6 V,
P_O = 3 W (P_i = adjust),
I_idle = 500 mA (V_GS = adjust),
f = 520 MHz,
VSWR LOAD 20:1 all phase
⎯
⎯
10
μA
⎯
⎯
5
μA
0.1 0.6 1.1
V
2.3 3.0
⎯
W
50
60
⎯
%
13.6 14.8 ⎯
dB
No degradation
⎯
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, V_DS = 3.6 V, I_idle = 500 mA, P_i = 0.1 W)
C7
P_i
Z_G = 50 Ω ^C1
C2
R1
C3
C9 ^L1
C10
C11
C4
L2
C12
C5 C6
C13
C8
P_O
Z_L = 50 Ω
V_DS
V_GS
C1: 27 pF
C2: 9 pF
C3: 2 pF
C4: 33 pF
C5: 9 pF
C6: 17 pF
C7: 10000 pF
C8: 10000 pF
C9: 1000 pF
C10: 10000 pF
C11: 4.7 μF
C12: 10000 pF
C13: 4.7 μF
R1: 120 Ω
L1: 27 μH
L2: φ0.6 mm enamel wire, 5.8ID, 7T
2
2009-08-24