RFM03U3CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
RFM03U3CT
VHF- and UHF-band Amplifier Applications
(Note) The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Unit: mm
• Output power: P_O = 3 W (typ.)
• Gain: G_P = 15 dB (typ.)
• Drain efficiency: η_D = 60% (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
16
V
V_GSS
3
V
I_D
2.5
A
P_D (Note 1)
7
W
T_ch
150
°C
T_stg
−45 to 150
°C
RF-CST3
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3W1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 12 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking (top view)
Pin 1 marking
2
1
03U3
3
**
Product name
Lot No.
1. Gate
2. Source (heat sink)
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2009-08-24