RFM00U7U Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

RFM00U7U
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain cut-off current
Gate-source leakage current
Threshold voltage
Output power
Drain efficiency
Power gain
Load mismatch
Symbol
I_DSS
I_GSS
V_th
P_O
η_D
G_P
⎯
Test Condition
V_DS = 20 V, V_GS = 0 V
V_GS = 10 V
V_DS = 7.2 V, I_D = 0.5 mA
V_DS = 7.2 V,
I_idle = 10 mA (V_GS = adjust),
f = 520 MHz, P_i = 10 mW,
Z_G = Z_L = 50 Ω
V_DS = 12.5 V,
P_O = 150 mW(P_i = adjust),
I_idle = 10 mA (V_GS = adjust),
f = 520 MHz,
VSWR LOAD 20:1 all phase
Min Typ. Max Unit
⎯
⎯
10
μA
⎯
⎯
5
μA
0.8 1.3 1.8
V
100 200
⎯
mW
⎯
50
⎯
%
10
13
⎯
dB
No degradation
―
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f = 520 MHz, V_DS = 7.2 V, I_idle = 10 mA, P_i = 10 mW)
C2
P_i
Z_G = 50 Ω ^C1
L1
L3
C4
R1
V_GS
L2
L4
C5
C7
C6
V_DS
C3
P_O
Z_L = 50 Ω
C1: 18 pF
C2: 2200 pF
C3: 2200 pF
C4: 10000 pF
C5: 10 μF
C6: 10000 pF
C7: 2200 pF
L1: φ0.8 mm enamel wire, 2.2ID, 3T
L2: φ0.8 mm enamel wire, 2.2ID, 2T
L3: φ0.8 mm enamel wire, 5.5ID, 4T
L4: φ0.8 mm enamel wire, 5.5ID, 8T
R1: 1.5 kΩ
2
2009-01-30