RFM00U7U Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VHF- and UHF-band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
RFM00U7U
RFM00U7U
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Unit: mm
• Output power: P_O = 200 mW (typ.)
• Gain: G_P = 10.8 dB (typ.)
• Drain efficiency: η_D = 50% (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
20
V
V_GSS
10
V
I_D
0.1
A
P_D (Note 1)
0.25
W
T_ch
150
°C
T_stg
−45 to 150
°C
JEDEC
JEITA
USQ
―
―
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2−2K1D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 6.0 m g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
WB
1 Pin positioning mark
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2009-01-30