JDV2S06S Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – TOSHIBA DIODE Silicon Epitaxial Planar Type

C_V – V_R
30
f = 1 MHz
Ta = 25°C
20
10
5
3
0 1 2 3 4 5 6 7 8 9 10
Reverse voltage VR (V)
r_s – V_R
0.4
f = 470 MHz
Ta = 25°C
0.3
0.2
0.1
0
0.3 0.5
1
2
3
5
10
Reverse voltage VR (V)
JDV2S06S
100
10
1
0.1
0.01
0
I_R – V_R
Ta = 80°C
60
25
4
8
12
16
Reverse voltage VR (V)
4
f = 1 MHz
3
2
1
0
d_C – Ta
VR = 1 V
2
4
6
-1
-2
-3
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
2
2002-01-23