JDV2S06S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA DIODE Silicon Epitaxial Planar Type

TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S06S
VCO for UHF Band Radio
· High Capacitance Ratio : C1V/C4V = 2.0 (typ.)
· Low Series Resistance : rs = 0.27 Ω (typ.)
· This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
150
°C
-55~150
°C
JDV2S06S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 mA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
¾
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: V_sig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
15
16
17
pF
7.0
8.0
8.5
1.8
2.0
¾
¾
¾
0.27 0.45
W
A
1
2002-01-23