JDV2S01S Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

C_V – V_R
10
f = 1 MHz
Vsig = 100 mVrms
1
0
1
2
3
4
5
6
7
Reverse voltage VR (V)
JDV2S01S
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
r_s – V_R
f = 470 MHz
1
10
Reverse voltage VR (V)
000707EAA2
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use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-12-18 2/2