HN7G08FE Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain (Note)
Collector-emitter
saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_FE
V_{CE(sat) (1)}
V_{CE(sat) (2)}
V_BE(sat)
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −15 V, I_E = 0
― V_EB =− 5 V, I_C = 0
― V_CE =− 2 V, I_C =− 10 mA
― I_C =− 10 mA, I_B =− 0.5 mA
― I_C =− 200 mA, I_B =− 10 mA
― I_C =− 200 mA, I_B =− 10 mA
― V_CE =− 2 V, I_C =− 10 mA
― V_CB =− 10 V, I_E = 0, f = 1 MHz
Turn-on time
t_on
―
HN7G08FE
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
300 ― 1000
― −15 −30
mV
― −110 −250
― −0.87 −1.2 V
― 130 ― MHz
― 4.2 ― pF
⎯ 40 ⎯
Switching time _{Storage time}
t_stg
―
⎯ 280 ⎯
ns
Fall time
t_f
― _{IB1 = −IB2 = 5 mA}
Note: h_FE classification A(A): 300~600, B(B): 500~1000
( ) marking symbol
Q2 Electrical Characteristics (Ta = 25°C)
⎯ 65 ⎯
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_{I (ON)}
V_{I (OFF)}
f_T
C_ob
R1
R1/R2
Test
Circuit
Test Condition
― V_CB = 50 V, I_E = 0
― V_CE = 50 V, I_B = 0
― V_EB = 5 V, I_C = 0
― V_CE = 5 V, I_C = 10 mA
― I_C = 5 mA, I_B = 0.25 mA
― V_CE = 0.2 V, I_C = 5 mA
― V_CE = 5 V, I_C = 0.1 mA
― V_CE = 10 V, I_C = 5 mA
― V_CB = 10 V, I_E = 0, f = 1 MHz
―
―
―
―
Min Typ. Max Unit
―
―
100
nA
―
―
500
0.074 ― 0.138 mA
80
―
―
―
0.1 0.3
V
0.7
―
1.3
V
0.5
―
0.8
V
―
250
― MHz
―
3
―
pF
3.29 4.7 6.11 kΩ
0.09 0.1 0.11
Marking
654
Type Name
h_FE Rank
76A
Equivalent Circuit (Top View)
65 4
Q2
Q1
12 3
12 3
2
2007-11-01