HN7G08FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – General-Purpose Amplifier Applications

TOSHIBA Multichip Discrete Device
HN7G08FE
General-Purpose Amplifier Applications
Switching and Muting Switch Applications
Q1
Low saturation voltage: V_{CE (sat)} (1) = −15 mV (typ.)
@I_C = −10 mA/I_B = −0.5 mA
Large collector current: I_C = −400 mA (max)
HN7G08FE
Unit: mm
Q1: 2SA1955F
Q2: RN1106F
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
Rating
−15
−12
−5
−400
−50
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
50
50
5
100
1. EMITTER1 (E1)
2. BASE1
(B1)
3. COLLECTOR2(C2)
4. EMITTER2 (E2)
Unit
5. BASE2
(B2)
6. COLLECTOR1(C1)
V
V
V
JEDEC
―
mA
JEITA
―
mA
TOSHIBA
2-2J1E
Weight: 0.003 g (typ.)
Unit
V
V
V
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
Storage temperature range
P_C*
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1
2007-11-01