HN7G07FU Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications

HN7G07FU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
h_FE **
V_{CE (sat) (1)}
V_{CE (sat) (2)}
V_{BE (sat)}
f_T
C_ob
V_CB = 15 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 2 V, I_C = 10 mA
I_C = 10 mA, I_B = 0.5 mA
I_C = 200 mA, I_B = 10 mA
I_C = 200 mA, I_B = 10 mA
V_CE = 2 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
300 ⎯ 1000
⎯
15
30
mV
⎯
110 250
⎯ 0.87 1.2
V
⎯
130
⎯ MHz
⎯
4.2
⎯
pF
Switching time
Turn-on time
Storage time
Fall time
t_on
OUTPUT
⎯
85
⎯
ns
INPUT 300 Ω
0V
t_stg
10 μs
⎯
170
⎯
ns
V_CC = 6 V
V_BB = 3 V
t_f
Duty cycle ^<= 2%
IB1 = IB2 = 5 mA
⎯
40
⎯
ns
**: h_FE Classification A:300~600, B:500~1000
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
Test Condition
I_CBO
I_CEO
I_EBO
h_FE
V_{CE (sat)}
V_I(ON)
V_I(OFF)
f_T
C_ob
R1
R1/R2
V_CB = 50 V, I_E = 0
V_CE = 50 V, I_E = 0
V_EB = 6 V, I_C = 0
V_CE = 5 V, I_C = 10 mA
I_C = 5 mA, I_B = 0.25 mA
V_CE = 0.2 V, I_C = 5 mA
V_CE = 5 V, I_C = 0.1 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
⎯
⎯
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
500
nA
0.37 ⎯ 0.71 mA
50
⎯
⎯
⎯
0.1 0.3
V
0.7
⎯
2.5
V
0.3
⎯
1.0
V
⎯
250
⎯ MHz
⎯
3
⎯
pF
1.54 2.2 2.86 kΩ
⎯ 0.22 ⎯
2
2007-11-01