HN7G02FU_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Power Management Switch Application, Inverter Circuit

Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input resistor
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
R1
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 mA
I_C = 5 mA, I_B = −0.25 mA
⎯
Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
V_GS = 10 V, V_DS = 0
I_D = 100 μA, V_GS = 0
V_DS = 20 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA V_GS = 2.5 V
HN7G02FU
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
120
⎯
400
⎯
−0.1 −0.3
V
3.29 4.7 6.11 kΩ
Min Typ. Max Unit
⎯
⎯
1
μA
20
⎯
⎯
V
⎯
⎯
1
μA
0.5
⎯
1.5
V
20
⎯
⎯
mS
⎯
20
40
Ω
2
2007-11-01