HN7G02FE Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit

Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input resistor
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
R1
V_CB = −50 V, I_E = 0
V_EB = −5 V, I_C = 0
V_CE = −5 V, I_C = −1 mA
I_C = −5 mA, I_B = −0.25 mA
⎯
HN7G02FE
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
120
⎯
400
⎯
−0.1 −0.3
V
3.29 4.7 6.11 kΩ
Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0
⎯
⎯
1
μA
V _{(BR) DSS} I_D = 100 μA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.7
⎯
1.3
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 10 mA
25
50
⎯
mS
R_{DS (ON)} I_D = 10 mA, V_GS = 2.5 V
⎯
4
12
Ω
C_iss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯ 11.0 ⎯
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
3.3
⎯
pF
C_oss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
9.3
⎯
pF
t_on
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.16
⎯
μs
t_off
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.19
⎯
Switching Time Test Circuit
(a) Switching time test circuit
2.5 V
IN
0
10 μS
V_IN
I_D
V_DD = 3 V
OUT _D.U. <= _1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common source
Ta = 25°C
V_DD
(b) V_IN
V_GS
(c) V_OUT
V_DS
2.5 V
90%
0
V_DD
V_{DS (ON)}
10%
90%
10%
t_r
t_f
t_on
t_off
2
2007-11-01