HN7G02FE Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Power Management Switch Applications, Inverter Circuit

TOSHIBA Multichip Discrete Device
HN7G02FE
HN7G02FE
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Unit: mm
Q1 (transistor): RN2110 equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
Unit
−50
V
−50
V
−5
V
−100
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
Characteristic
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
V_DS
V_GSS
I_D
Rating
Unit
20
V
10
V
50
mA
Q1, Q2 Common Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2N1F
Weight:0.003g (typ.)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P (Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
Marking
Equivalent Circuit (top view)
654
FT
Q1
Q2
123
1
2007-11-01